(China (Mainland))
Product Summary
The third generation HEXFET IRFD110 from international rectifier the designer with the best combination of fast switching, ruggedized device, low on resistance and cost effectiveness. The 4pin DIP package IRFD110 is a low cost machine insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.
Parametrics
IRFD110 absolute maximum ratings: (1)Drain to Source Voltage, VDS: 100V; (2)Drain to Gate Voltage (RGS = 20kΩ), VDGR: 100V; (3)Continuous Drain Current, ID: 1.0A; (4)Pulsed Drain Current, IDM: 8.0A ; (5)Gate to Source Voltage, VGS: ±20V; (6)Maximum Power Dissipation, PD: 1.0W; (7)Linear Derating Factor: 0.008W/℃; (8)Single Pulse Avalanche Energy Rating, EAS: 19mJ; (9)Operating and Storage Temperature, TJ, TSTG: -55 to 150℃; (10)Leads at 0.063in (1.6mm) from Case for 10s, TL: 300℃.
Features
IRFD110 features: (1)1A, 100V; (2)rDS(ON) = 0.600Ω; (3)Single Pulse Avalanche Energy Rated; (4)SOA is Power Dissipation Limited; (5)Nanosecond Switching Speeds; (6)Linear Transfer Characteristics; (7)High Input Impedance; (8)Related Literature.
Diagrams
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 IRFD110 |
Vishay Semiconductors |
MOSFET 100V Single N-Channel HEXFET |
Data Sheet |
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IRFD110, SiHFD110 |
Other |
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Data Sheet |
Negotiable |
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IRFD110PBF |
Vishay Semiconductors |
MOSFET 100V Single N-Channel HEXFET |
Data Sheet |
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